Thin film deposition:

chamber1 chamber2 chamber3
Thin film growth chamber I: MBE
(Biemtron)

12 crucibles (metal)
substrate heating
RHEED
LEED
Thin film growth chamber II: MBE
(Biemtron)

3 crucibles (metal)
6 crucibles (organic)
substrate cooling
RHEED
Thin film growth chamber III: sputtering
(CanonANELVA)

8 target (DC & RF)
substrate heating


chamber4 chamber5
Thin film growth chamber IV:
(RDEC)

4 crucibles (metal)
Thin film growth chamber V:
(SHINKO SEIKI)
SiO2 sputtering deposition

Measurement:

probe1 probe2 probe3
Prober I:
(TOEI)

in plane 150 mT

Prober III:
(TOEI)
in plane 300 mT

Prober IV:
(TOEI)

in plane 300 mT
perpendicular 1000 mT
probe4 probe5 VSM
Low temp. meas. system I
(Oxford, MagLab)

in plane 7000 mT
Low temp. meas. system II
in plane 1700 mT
perpendicular 1700 mT
VSM


MOKE ESR LASER
MOKE

Cavity ESR
(Bruker
)
LASER
(Cameleon)

Micro-fabrication:

EBL PL Ar
Electron beam lithography
(ELIONIX, ELS 3700)



Photo lithography
(MIKASA)



Ar-ion milling
(HAKUTO)
End point detector
(HIDEN)
AFM <
Atomic Force Microscope
(SII)

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